Integration of Split Length Technique and Current Replication Branch in Two-Stage Class AB Operational Amplifier
Journal Title: International Journal of engineering Research and Applications - Year 2018, Vol 8, Issue 7
Abstract
A new two-stage class AB operational amplifier (op-amp) designed in which the differential-pair device N-channel Metal Oxide Semiconductor Field Effect Transistor (NMOSFET) is replaced with split-length device and input stage is transformed into class AB using two-tail transistors. Current replication branch also incorporated in the design to increase output current. Hence, in this design, a class AB operation is achieved in both output and input. The entire design is implemented and simulated in Cadence design environment in 180 nm with 1.8 V supply. The newly designed op-amp exhibits high and symmetrical slew rate with the small amount of power consumption. Moreover, this design also improves gain and bandwidth and found to exhibit better performance as compared to other analysed existing topologies. The newly designed class AB op-amp works at 1.8 V supply with a positive slew rate of 57 V/µs and negative slew rate of 56 V/µs, again of 90.33 dB, thephase margin of 56.87, the bandwidth of 36 MHz, the power of 915 µW and settling time of 50 ns. Hence, this design exhibit excellent performance, which can satisfy the growing demands for energyefficient high-speed circuits in the modern electronic, and communication industry. Index Terms—CMOSFET circuits, Operational amplifiers; slew rate; gain; phase margin; split length transistors
Authors and Affiliations
Nimna Joseph, Nina Joseph, Jobin Varghese
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