Investigation of Changes in Resistivity of n Si with Temperature and Uniaxial Stress
Journal Title: Фізика і хімія твердого тіла - Year 2017, Vol 18, Issue 1
Abstract
In this work the changes in resistivity of n Si with temperature and uniaxial stress X, oriented both in <100> and in [111] direction, were investigated. The value of the anisotropy parameter of mobility was obtained in the conditions of JIIXII[100] and J^IIXII[100] with using the experimental data concerning longitudinal and transverse tenso-resistance. The presence of the n-Si tenso-resistance was found in the conditions of JIIXII [111], i.e., in the absence of the interminimum redistribution of charge carriers. The physical explanation of the results was presented.
Authors and Affiliations
G. P. Gaidar
Keywords
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- EP ID EP263406
- DOI 10.15330/pcss.18.1.34-40
- Views 87
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Investigation of Changes in Resistivity of n Si with Temperature and Uniaxial Stress
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