Laser-Stimulated Increase Reflectivity of Semiconductors
Journal Title: Фізика і хімія твердого тіла - Year 2014, Vol 15, Issue 4
Abstract
In this paper presents the results of optical reflection spectra of single crystals of n-Si (100) and CdTe (111) in the range 0.2 1.7 microns before and after laser irradiation in the range of energies 66 164 mJ/cm2. Is experimentally shown to increase reflectivity of the studieds crystals at a given laser irradiation. This cumulative effect is explained by differences in the optical characteristics of the surface layer and volume of the material (complex refractive index of the surface layer is different from the complex refractive index of volume of the material ). Examined the mechanisms of laser irradiation. Calculated depending on the depth of the formation of a shock wave, surface temperature, depth of melting Si and CdTe during laser irradiation.
Authors and Affiliations
P. O. Gentsar, O. I. Vlasenko, S. M. Levytskyi, V. A. Gnatyuk
Keywords
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