MEASURING OF CONDUCTIVITY AND ANALYSIS OF ELECTROPHYSICAL CHARACTERISTICS OF TRANSISTORS WITHIN GENERALIZED MODEL OF ELECTRON TRANSPORT

Abstract

In a tutorial article directed to serve researchers, university teachers and students, we discuss experimental methods for measuring the resistance in the frame of the generalized transport Landauer – Datta – Lundstrom (LDL) model, including measurements under applied external magnetic field, namely: method of variable resistor length, four-point measurement scheme, the classical method of the Hall effect measurement and different variants of the van der Pauw method, temperature measurements and accounting for artifacts (Nernst effect), measurements in strong magnetic fields(Shubnikov–de Haas effect). Hall effect setup and van der Pauw measuring geometry enables to measure both the resistance and Hall concentration / Hall mobility. We also can estimate Hall factor, which enables to determine surface concentration of electrons and their real mobility more preciously. Temperature measurements permit to identify the dominant scattering mechanism. Hall measurements need special accuracy in order to avoid the influence of galvanic and thermomagnetic effects, such as Nernst effect. Measurements in strong magnetic fields can supply with essentially new information, however, they need materials with rather high mobility of electrons.

Authors and Affiliations

Yu. O. Kruglуak, M. V. Strikha

Keywords

Related Articles

FORMATION OF THE DEVICES ON THE SAW CHARACTERISTICS BY A METHOD OF SELECTIVE POLARIZATION

A principle, constructive and technological solving of the formation of the device on the surface acoustic waves with piezoelectric acoustic duct basic characteristics with the use of a new method has been described. The...

STRUCTURE AND OPTICAL PROPERTIES OF CDTE FILMS OBTAINED BY MAGNETRON SPUTTERING

The aim of this study was to determine the influence of physical and technological condensation modes of cadmium telluride (CdTe) films obtained by direct current magnetron sputtering on their crystal structure and optic...

GAS IDENTIFICATION ON THE BASIS OF MICROCOMPUTER ANALYSIS OF POROUS SILICON SENSOR DATA

The paper deals with the problem of detecting the combustible and toxic gases, as well as their pairwise recognition on the basis of measuring the changes in tehnical parameters of porous silicon (PS), particularly inves...

PROCESSES OF EXCITATION RELAXATION IN MOLECULAR SYSTEMS FOR DIFFERENT TEMPERATURES

In the work studying frequency and temperature dependence of quantum output of the methylene blue molecules and rezazurine molecules in the solid polymer solution are carried out. It has been found an empirical dependenc...

INVESTIGATION AND OPTIMIZATION OF REACTIVATION BUTYRYLCHOLINESTERASE-BASED BIOSENSOR FOR INHIBITORY ANALYSIS OF PESTICIDES

In this manuscript we report development of the conductometric biosensor for the pesticides detection and analyze the possibility of its reactivation after inhibition. A differential pair of planar gold interdigitated el...

Download PDF file
  • EP ID EP398584
  • DOI 10.18524/1815-7459.2017.2.106603
  • Views 111
  • Downloads 0

How To Cite

Yu. O. Kruglуak, M. V. Strikha (2017). MEASURING OF CONDUCTIVITY AND ANALYSIS OF ELECTROPHYSICAL CHARACTERISTICS OF TRANSISTORS WITHIN GENERALIZED MODEL OF ELECTRON TRANSPORT. Сенсорна електроніка і мікросистемні технології, 14(2), 27-45. https://europub.co.uk/articles/-A-398584