MEASURING OF CONDUCTIVITY AND ANALYSIS OF ELECTROPHYSICAL CHARACTERISTICS OF TRANSISTORS WITHIN GENERALIZED MODEL OF ELECTRON TRANSPORT
Journal Title: Сенсорна електроніка і мікросистемні технології - Year 2017, Vol 14, Issue 2
Abstract
In a tutorial article directed to serve researchers, university teachers and students, we discuss experimental methods for measuring the resistance in the frame of the generalized transport Landauer – Datta – Lundstrom (LDL) model, including measurements under applied external magnetic field, namely: method of variable resistor length, four-point measurement scheme, the classical method of the Hall effect measurement and different variants of the van der Pauw method, temperature measurements and accounting for artifacts (Nernst effect), measurements in strong magnetic fields(Shubnikov–de Haas effect). Hall effect setup and van der Pauw measuring geometry enables to measure both the resistance and Hall concentration / Hall mobility. We also can estimate Hall factor, which enables to determine surface concentration of electrons and their real mobility more preciously. Temperature measurements permit to identify the dominant scattering mechanism. Hall measurements need special accuracy in order to avoid the influence of galvanic and thermomagnetic effects, such as Nernst effect. Measurements in strong magnetic fields can supply with essentially new information, however, they need materials with rather high mobility of electrons.
Authors and Affiliations
Yu. O. Kruglуak, M. V. Strikha
Keywords
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- EP ID EP398584
- DOI 10.18524/1815-7459.2017.2.106603
- Views 100
- Downloads 0
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