MODEL RESEARCH OF THE NON-LINEAR DYNAMICS OF RADIO-ENGINEERING DEVICES BASED ON A TRANSISTOR STRUCTURE WITH NEGATIVE RESISTANCE
Journal Title: Вчені записки Таврійського національного університету імені В. І. Вернадського. Серія: Технічні науки - Year 2018, Vol 29, Issue 3
Abstract
The paper presents results obtained after theoretical investigating and mathematical modelling a radio-engineering device for forming signals based on a bipolar transistor structure with negative resistance. A new equation for approximating the static I–V curve of the bipolar transistor structure with negative resistance was proposed. A simple analogue circuit of the radio-engineering device for forming signals was considered. A mathematical model of the device was suggested. Dynamics of the periodic oscillation was examined in modes of amplification, frequency division, and input signal amplitude modulation. Phase portraits, Lissajous curves, time diagrams, amplitude-frequency spectra of input and output voltages were obtained.
Authors and Affiliations
А. О. Семенов
Keywords
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