Modelling and Simulation of MTJ in a Static Behaviour
Journal Title: International Journal for Research in Applied Science and Engineering Technology (IJRASET) - Year 2016, Vol 4, Issue 6
Abstract
This Paper gives an investigation into modelling the static behaviour of MTJ. Magnetic Tunnel Junction, MTJ which is due to rise in Spintronic result in becoming a novel memory. MTJ is classified into two classes which depend on the orientation of the easy axis with respect to the major axes of the layers. When the easy axis of the Pinned layer or the ferromagnetic layer is parallel to the plane of the layer then it is known as In-Plane Anisotropy (IPA) devices and when the easy axis of the Pinned layer or the ferromagnetic layer is perpendicular to the plane of the layer is known as Perpendicular-to-Plane Anisotropy (PPA) devices. The occurrence geometry of the device for PPA devices is due to the thermal stability, and for IPA devices is from magneto crystalline effects.
Authors and Affiliations
Krishna Jibon Mondal, Dr. Sanjay Tiwari
Keywords
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