MOSFET Scaling and Small Geometry Effects

Abstract

 There have been proposed several sets of “rules” for scaling, for the purpose of discovering as much as possible the electrical consequences of MOSFET size reduction. Principle am There have been proposed several sets of “rules” for scaling, for the purpose of discovering as much as possible the electrical ong these are rules by Dennard in 1974 (1 µm channel length) and Baccarani in 1984 (0.25 µm). By scaling, we hope to… -Increase packing density and chip functionality, Increase device current and speed. Lower cost (increase cost effectiveness). but the trade-offs are Mobility degradation due to increased vertical fields. Velocity saturation due to increased lateral fields, Charge sharing by drain (short channel effects; DIBL), Increased drain/source resistance due to reduced area for current flow.

Authors and Affiliations

Mr. Sanjeev Kumar Singh

Keywords

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  • EP ID EP132853
  • DOI -
  • Views 69
  • Downloads 0

How To Cite

Mr. Sanjeev Kumar Singh (30).  MOSFET Scaling and Small Geometry Effects. International Journal of Engineering Sciences & Research Technology, 3(3), 1586-1590. https://europub.co.uk/articles/-A-132853