Non-stoichiometric silicon oxides SiOx (x < 2)
Journal Title: Поверхня - Year 2018, Vol 25, Issue 10
Abstract
The review is devoted to the analysis of experimentally and theoretically obtained data on the methods of synthesis, structure and properties of non-stoichiometric silicon oxide SiOx (x <2) in a wide range of the oxygen content. The main areas of application of silicon suboxide in micro- and optoelectronics, in particular, in the manufacture of solar cells are described. The advantages and disadvantages of the basic theoretical models used in the consideration of the properties of SiOx – the random bond model and the random mixture model are considered. It has been shown that none of these models makes it possible to reproduce the position of the Si2p line – the core level of SiOx samples at different x values in the experimentally obtained photoelectron spectrum. The so-called intermediate model is also described, the result of its use gives a clear two-dimensional picture of the elemental composition of the surface and the dependence of the positions of the bottom of the conduction band and the top level of the valence band of SiOx samples. The IR spectra of various SiOx samples have been obtained and analyzed, what makes it possible to use vibrational spectroscopy to elucidate their structural features and to determine the oxygen concentration in them. The energy effects of Si2+ + Si2+ → Si+ + Si3+ and Si+–Si3+ → Si0–Si4+ disproportionation reactions are analyzed, purposeful to explain the mechanism of formation of silicon nanoclusters in the bulk SiOx phase. The results of calculations by the density functional theory method have shown that the tetrahedral environment of the silicon atom by Si atoms can occur only when the humber of these atoms in the cluster is more than 5.
Authors and Affiliations
O. V. Filonenko, V. V. Lobanov
Keywords
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- EP ID EP463581
- DOI 10.15407/Surface.2018.10.118
- Views 107
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