Operational Transconductance Amplifier in 350nm CMOS technology
Journal Title: Elektronika - Year 2015, Vol 19, Issue 1
Abstract
This paper presents transistor level design of operational transconductance amplifier in CMOS technology. Custom designed, circuit is to be built-in into the mixed-signal, switched capacitor circuit. Amplifier targets relatively high slew-rate and moderate open loop gain with megahertz order gain bandwidth. Adopted architecture is discussed appreciating application in switched capacitor circuits. Circuit behavior is examined through set of simulations. Obtained results confirmed desired behavior. Target technology process is TSMC 350nm.
Authors and Affiliations
Dejan D. Mirković, Predrag M. Petković, Ilija Dimitrijević, Igor Mirčić
Keywords
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- EP ID EP362647
- DOI 10.7251/ELS1519032M
- Views 57
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