Peculiarities of nanocrystalline silicon films growth on porous anodic alumina surface
Journal Title: Semiconductor Physics, Quantum Electronics and Optoelectronics - Year 2017, Vol 20, Issue 3
Abstract
The influence of porous alumina template morphology on silicon films growth at deposition by PE CVD has been investigated. As it was shown, the structural properties of silicon phases depend on the pore geometry and surface morphology of the anodized porous alumina substrate. In case of porous alumina formation in one stage, ripple-like morphology takes place. The growth of a-Si:H film is observed at deposition. After two-stage anodization, the porous alumina has tipped/ribbed morphology. In this case, usually a-Si:H film grows on the bottom of the pores, and nc-Si:H/a-Si:H one grows on the tips. In the case of deep pores, the nanocrystalline nc-Si:H film grows only above the top of the pores. The obtained results could be used when developing new types of photocells, sensors, nanophotonics and ionics devices.
Authors and Affiliations
P. V. Parfenyuk, A. A. Evtukh, I. M. Korobchuk, V. I. Glotov, V. V. Strelchuk
Keywords
Related Articles
- EP ID EP232875
- DOI 10.15407/spqeo20.03.330
- Views 79
- Downloads 0
Modeling of X-ray rocking curves for layers after two-stage ion-implantation
In this work, we consider the approach for simulation of X-ray rocking curves inherent to InSb(111) crystals implanted with Be+ ions with various energies and doses. The method is based on the semi-kinematical theory of...
SrTiO3:Eu3+ phosphors prepared by sol-gel synthesis: Structural characterization, magnetic properties and luminescence spectroscopy study
We report the results of the comprehensive study of the structural, magnetic and optical properties of SrTiO3 perovskite doped with Eu3+ ions. Polycrystalline powders were obtained by sol-gel process including high-tempe...
The influence of the exciton non-radiative recombination in silicon on the photoconversion efficiency. 1. The case of a long Shockley–Read–Hall lifetime
By comparison of the experimental dependence of bulk lifetime in silicon on the doping and excitation levels with theoretical calculations, it has been shown that a new recombination channel becomes operative when Shockl...
Low doses effect in GaP light-emitting diodes
The paper is devoted to the electrophysical characteristics study of serial red and green GaP light-emitting diodes (LEDs) irradiated with low α-particles doses (Φ ≤ 1012 cm–2). It was stated that radiation features of p...
Comparison of the synthesis routes for the ZnO/porous silica nanocomposite
ZnO/porous silica nanocomposites were successfully fabricated by three different types of synthesis techniques. In all cases, the molecular sieve SBA-16 was used as a porous matrix. The in situ growth the nanoparticles o...