Performance study of a HEMT for power application
Journal Title: Journal of New technology and Materials - Year 2015, Vol 5, Issue 1
Abstract
In this paper, we present a simulation results of the design and characterization for GaN double-gate transistor, that has T-gate geometries with high-electron-mobility to realize high performance using silvaco TCAD Software, this transistor is used for amplifiers application. We have obtained an excellent current density, almost 817mA/mm, a peak extrinsic transconductance of 915mS/mm at VDS=2 V, and cutting frequency cutoffs of 878 GHz, and maximum frequency of 982 GHz.
Authors and Affiliations
Zakarya Kourdi, Benyounes Bouazza, Ahlem Guen-Bouazza, Mohamed Khaouani
Keywords
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