pH Sensor Based on Dual Gate Organic Field Effect Transistor
Journal Title: International Journal of Innovative Research in Computer Science and Technology - Year 2023, Vol 11, Issue 1
Abstract
Nowadays, Organic semiconductors (OSCs) are receiving increasing attention these days because they have many attractive properties – including light weight, low-cost production, low- temperature processing, mechanical flexibility, and abundant availability. Earlier, ISFET ( The ion sensitive field effect transistor) was used as a sensing device. It is used in measuring ion concentration in the solution. It is based on inorganic field effect transistors where an electrolyte solution and ion- sensitive membrane is embedded. It is a special type of MOSFET in which gate electrode was replaved by refrence electrode and ion-sensistive layer. There are various categories of ISFET such as PH-ISFET, CHEM-ISFET, BIO-ISEFT etc. As these devices have many advantages,they show good compatibility with the CMOS technology ,controlling process very precisely,operates at equilibrium conditions,capable of showing label free detection and easy to use, still these devices suffer from few innate deficiency.In case of long-term use they are unrelible , unstable due to ionic damage and should have low SNR. For sensing purpose, the main principle involves a variation in the surface capacity that occurs due to ionic interactions at the electrolye/gate oxide. ISFET main constraint lies in the the poor sensing margin within the Nernstian limit (59 mV per pH) at room temperature and this has gained much research attention over the past few decades.So,diffedrent devices have been tried till now to improve the sensing margin(>59 mV per pH) and hence this results in different device design with different configurations .We also proceeded our work with the same aim to improve the Nernestian limit using Organic Field Effect Transistor as device and hence tried different configurations to get the desired results.In our work, we have developed a dual gate organic field effect transistor (DG-OFET) based pH sensor that will be able to detect the variations in the aqueous (electrolyte) medium.In this structure source sided underlap technique with dual gate sensing approach has been used.The simulation results were extracted with the help of software package Silvaco TCAD-ATLAS.The simulated results display that the proposed DG-OFET shows significantly higher sensitivity for different dielectrics.
Authors and Affiliations
Safura Hameed Bhat, Ravinder Pal Singh, and Monika Mehra
Keywords
Related Articles
- EP ID EP745994
- DOI 10.55524/ijircst.2023.11.1.12
- Views 1
- Downloads 0
Evaluating Median Accuracy of ResNet50 and VGG16 Models in COVID-19 Detection
The increasing number of Covid-19 cases and the lack of reliable, quick-to-use testing tools herald a new era in X-ray analysis employing deep learning methods. The Covid-19 virus's emergence poses a threat to human exis...
Solution of Beam Structure Analysis Using SAP2000
The beam structure is an essential structural element for construction professionals, and most engineers should be familiar with beams. The type of beam structure discussed in this paper is a simple beam structure. Calcu...
WoT Based Contamination Monitoring System
Modernization and industrial development are disrupting the contamination 's equilibrium by releasing untreated harmful toxic elements into the atmosphere, resulting in contamination of basic ecosystem elements such as w...
Blockchain for Enhancing IoT Privacy and Security
The technological advancements in the network technologies that deal with interconnected computing devices has led to the dramatic increase in the number of Internet of Things (IoT) devices. It promises to improve the...
Reinforcement Learning: A Comprehensive Overview
Machine Learning is one of the most essential parts of Artificial Intelligence. Machine learning now exists as an important innovation and has a sufficient number of uses. Reinforcement Learning is one of the largest Mac...