Photoluminescence nc-Si/SiOx Porous Structures Implanted Carbon Ions
Journal Title: Фізика і хімія твердого тіла - Year 2014, Vol 15, Issue 1
Abstract
The influence of carbon ions implantation on photoluminescence (PL) of porous nc-Si/SiOx layers with columnar structure, formed by vacuum glance angle deposition and subsequent high temperature annealing of SiOx films. The PL spectra of the implanted structures covers almost the entire visible and near-infrared region, and includes two main components with maxima in the area 520-570 and 620-680 nm. Long wavelength PL band associated with silicon nanoparticles and radiation in the visible region of the spectrum can be caused by luminescence of carbon precipitates and SiC nanoclusters. As a result of the selective etching of these structures in HF vapor the intensity of PL throughout the spectral range increases significantly (up to two orders of magnitude) due to passivation of nonradiative recombination centers.
Authors and Affiliations
V. G. Lytovchenko, V. P. Melnyk, G. V. Fedulov, V. A. Danko, I. Z. Indutnyi, K. V. Mykhaylovska, P. E. Shepelyavyi
Keywords
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