PHOTOSENSITIVE HETEROSTRUCTURE OF GaTe — THIN NANOSTRUCTURED DIELECTRIC — InSe
Journal Title: Международный научный журнал "Интернаука" - Year 2016, Vol 2, Issue 4
Abstract
Heterostructure p-GaTe — n-InSe was prepared by the method of mechanical contact of GaTe oxidized plate with van der Waals surface of InSe. Topology of surfaces of GaTe and InSe layered crystals were studied by using AFM-images. It is shown that there was formed thin oxide dielectric layer of Ga2 O3 on the heterojunction p-GaTe — n-InSe. The direct branch of the current-voltage characteristics of the heterostructure show high diode properties. Sensitivity spectral area of pGaTe — n-InSe heterostructure was identified and the characteristics of its energy band diagram were shown.
Authors and Affiliations
Valery Katerynchuk, Bohdan Kushnir, Zakhar Kudrynskyi, Oksana Lytvyn
Keywords
Related Articles
- EP ID EP235266
- DOI -
- Views 75
- Downloads 0
ABOUT THE ROLE OF TRANSPORT IN THE DEVELOPMENT OF TOURISM IN UKRAINE
The article briefly describes the characteristics of such sectors of the country's economy as tourism and transport, similarities and differences in the products of transport and tourism products, reveals the nature of t...
THE PROBLEM OF STYLISTIC CLASSIFICATION OF COLLOQUIAL VOCABULARY
A discussion of the ways the English vocabulary can be classified from a stylistic point of view
DEVELOPMENT OF E-COMMERCE IN KAZAKHSTAN
Opening of basic definitions, principles and approaches of development of electronic trade in Kazakhstan.
AUTOMATED SYSTEM OF BIG DATA COLLECTION, PROCESSING AND ANALYSIS
The work is dedicated to the development of an automated system of big data collection, processing and analyzing.
PERSONALITY AND COGNITIVE PROCESSES PECULARITIES IN NICOTINE ADDICTED PERSONS
It is shown that smoking respondents (with nicotine addiction experience more than 5 years) have self-regulation inversion: for example, right brain hemisphere supports executive functions (left in control group), on the...