PHOTOVOLTAIC STRUCTURES BASED ON HETEROJUNCTION ZnO/Si
Journal Title: Proceedings of Electrotechnical Institute Prace Instytutu Elektrotechniki - Year 2014, Vol 61, Issue 264
Abstract
We report on the properties of photovoltaic (PV) structures based on thin films of n-type zinc oxide grown by atomic layer deposition method on a cheap silicon substrate. Thin films of ZnO are used as n-type partner to p-type Si (110) and, when doped with Al, as a transparent electrode. PV structures with different electrical parameters and thicknesses of ZnO layers were deposited to determine the optimal performance of PV structures. The best response we obtained for the structure with ZnO layer thickness of 800 nm. The so-obtained PV structures show 6% efficiency. <br/><br/>
Authors and Affiliations
Rafał Pietruszka, Grzegorz Łuka, Bartłomiej S. Witkowski, Krzysztof Kopalko, Eunika Zielony, Piotr Biegański, Ewa Płaczek-Popko, Marek Godlewski
Keywords
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