PHYSICS OF NANOTRANSISTORS: STRUCTURE, METRICS, AND CONTROL
Journal Title: Сенсорна електроніка і мікросистемні технології - Year 2018, Vol 15, Issue 4
Abstract
The transistor is the key element of almost any electronic device. By the end of the 20th century, MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) sizes had reached a nanoscale, and the nanotransistor itself was the first of all nanoscale electronic devices to be the object of large-scale industrial production. Today, the length of the conduction channel of the transistor has approached 10 nm, which is several orders of magnitude lower than in the first MOSFET. The task of this new series of our tutorial reviews directed to serve researchers, university teachers and students, is to discuss the physical models and principles underlying the functioning of nanoscale MOSFETs and based both on the traditional «top – down» approach and on a more modern approach originating in the works of Rolf Landauer, developed later by Suprio Datta and Mark Lundstrom.
Authors and Affiliations
Yu. A. Kruglyak, M. V. Strikha
Keywords
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- EP ID EP491511
- DOI 10.18524/1815-7459.2018.4.150488
- Views 85
- Downloads 0
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