RESULTS OF THE ANALYSIS OF ADAPTIVE PROCESSING OF THE BRIGHTNESS THRESHOLD OF THE DIGITAL RASTER IMAGES SEMICONDUCTOR WAFFER
Journal Title: Вчені записки Таврійського національного університету імені В. І. Вернадського. Серія: Технічні науки - Year 2018, Vol 29, Issue 5
Abstract
The given work is devoted to the methods of obtaining binarized digital images on the wafer GaAs. The analyzed method is evaluated for view of using for semiconductor plate for image binarization. Dislocation can be described as an outline with geometric primitives – lines in conjunction with a structural description of the form of dislocation and per-pixel analysis. Parameters for adjusting the method for the purpose of using in the processing of digital images of GaAs semiconductor plates are analyzed.
Authors and Affiliations
А. Н. Самойлов, И. В. Шевченко
Keywords
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