Room Temperature Synthesis of Nanocubic CuInSe2 Thin Films
Journal Title: Journal of Advanced Chemical Engineering - Year 2017, Vol 7, Issue 1
Abstract
The arrested precipitation technique (APT) is used to deposit CuInSe2 thin films. The deposition of thin films is carried out at room temperature. The optical study reveals direct allowed type of transition for CuInSe2 thin films. The XRD pattern confirms mixed phase of CuInSe2 thin films. The SEM image reveals nanocubic thin film formation. The EDS analysis confirms presence of copper, indium and selenium elements in the synthesized thin film. The synthesized thin films are beneficial for the solar cell applications.
Authors and Affiliations
Vidya Patil S, Neha Desai D, Suvarta Kharade D, Rahul Mane M, Poatrao Bhosale N
Keywords
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- EP ID EP356314
- DOI 10.4172/2090-4568.1000171
- Views 46
- Downloads 0
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