Schematic-Topological Modeling of the SOI CMOS Ring Oscillators for Sensor Microsystems on Chip
Journal Title: Фізика і хімія твердого тіла - Year 2018, Vol 19, Issue 4
Abstract
The paper presents the results of research of frequency and energy characteristics of ring generators on the basis of silicon-on-isolator of the CMOS transistor structures, depending on their circuit design and constructive and technological implementation, design and modeling of the schemes of the primary transformation of information from integral sensitive elements for sensor microsystems-on-crystal
Authors and Affiliations
M. V. Kotyk, V. V. Dovgyi, I. T. Kogut, V. I. Holota
Keywords
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- EP ID EP500819
- DOI 10.15330/pcss.19.4.358-362
- Views 82
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