SEMICONDUCTOR INVESTIGATIONS, LED TO THE P-N JUNCTION DISCOVERY BY UKRAINIAN SCIENTISTS
Journal Title: Сенсорна електроніка і мікросистемні технології - Year 2015, Vol 12, Issue 3
Abstract
V.E. Lashkarev (1903-1973) – famous scientist of Ukraine in semiconductor physics and application of it. The main achievements were obtained on the first researches of the surface by LEED (low-energy electron diffraction), the photoelectric properties of the bulk and surface of semiconductors, study of the semiconductor surface thermoelectric effects. Last , in particular,. lead to discovery of the world level result: observation of the p-n junction on base of hetero structure Cu-Cu2O-CuO (published . in Izv.Acad. Sci.USSR, s.5,#4-5, hh.442-446, 1941). Structure with p-n junction till now is the base for electron device industry.
Authors and Affiliations
V. G. Lytovchenko
Keywords
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- EP ID EP399090
- DOI 10.18524/1815-7459.2015.3.107692
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