Silicon’s Influence on TiN and TiC Thin Films Obtained by PVD
Journal Title: RECENT - Year 2009, Vol 10, Issue 26
Abstract
This paper aims to present the influence of the silicon on the structure and properties of thin films, type TiN and TiC, enriched by physical vapour deposition method. The studied thin films were deposited by cathodic magnetronic sputtering technique, using a classic DC generator and a high power generator (HIPIMS). The hexagonal crystallographic structure of α Ti modifies into a cubic centred crystal lattice, NaCl type, together with the nitrogen or carbon enrichment and the synthesis of TiN and respectively TiC compounds. The supplementary addition of silicon, offers the conditions for the formation of SixNy or SixCy amorphous fazes, besides the crystalline ones (TiN or TiC). The properties of such nanocomposites films, with a thickness of maximum 3 µm, depends on the ratio between the metallic phase (TiN or TiC) and the amorphous phase (SixNy or SixCy) and on the TiN or TiC columnar grains diameter.
Authors and Affiliations
David JOGUET, Bogdan BORCEA, Camelia OLTEANU, Alexandru MUNTEANU
Keywords
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