Simulation of an operational amplifier based on MOS transistors
Journal Title: Вісник НТУУ КПІ. Серія Радіотехніка, Радіоапаратобудування - Year 2010, Vol 0, Issue 42
Abstract
The analysis of model's parameters of MOS transistor was carried out; the job contains results of simulation of an operational amplifier.
Authors and Affiliations
I. Rozdobudko, K. Dotsenko
Keywords
Related Articles
- EP ID EP309461
- DOI 10.20535/RADAP.2010.42.94-98
- Views 41
- Downloads 0
Research of magnetic properties nonmagnetized high-frequency ferrite in a wide frequency band
Introduction. Existing methods for investigating magnetic permeability allows to obtain results on the same frequency. Moving to a different frequency requires reconfiguring. Method for measuring the permeability over...
Frequency modulated signal generation
Compound frequency modulated signal generation process with simple integrated direct digital synthesis microcircuit is presented starting DDS microcircuit choice, time and modulation characteristics analysis, interface u...
Experimental research electromagnetic field in a microstrip line by magnetic probe on the basis of a ferromagnetic resonance
The method of a magnetic probe on the basis of a ferromagnetic resonance for research of structure of an electromagnetic field in microstrip line is lead.
Using of Volterr's Transfer Functions in Solving the Problem of Stochastic Filtration with Input Signal in the Form of White Gaussian Noise
This paper is continuation of the researches of non-linear systems in case of different input signals. Earlier, the case of a harmonic input signal was considered. Expressions for the output harmonics were received. In p...
Zone diagram formation of photon and phonon crystals
Inroduction. Photon and phonon crystals are crystal structures, which just like the crystals, are characterized by zone spectral properties. The purpose of the article is to research the input impedance characteristics a...