slugDesign and Simulation of Three StagespHEMT LNA At C-Band
Journal Title: International Journal for Research in Applied Science and Engineering Technology (IJRASET) - Year 2014, Vol 2, Issue 5
Abstract
Thispaper represents the designing of three stage LNA using EC2612 pHEMT technology.pHEMT technology gives high transconductance and shows better reliability. This three stage amplifier has been designed for C-band applications. The GaAlAs LNA is suitable for transceiver front end due to the low input output VSWR, high stability and redundancy. The LNA is designed at 5 GHz using lumped parameters and over RT duroid (εr= 2.2). This structure is simulatedusing ADS software. The simulated result shows the minimum noise figure of 0.3dB and a maximum gain of 33dB.
Authors and Affiliations
Swati Sharma, Shikha Sharma
Keywords
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