Stability Fault analysis in Sub-threshold SRAM using Wavelet transform
Journal Title: International Journal of engineering Research and Applications - Year 2018, Vol 8, Issue 7
Abstract
Designing and testing robust SRAM memory for sub threshold systems is extremely challenging because of the reduced voltage margin and are highly sensitive to physical defects. Because of the unique architecture of sub-threshold cells, some of the detectable defects in case of conventional SRAM escape in sub-threshold SRAM cell. Therefore, stability fault analysis in sub-threshold SRAM cell is essential. In literature, various test methods have been demonstrated and all of them are based on voltage based test techniques. Voltage based test techniques may not be able to target all complete set of open defect faults; hence there is a need for parametric test method which supplement the existing test schemes. In this paper, transient current (IDDT) testing has been used as an alternative efficient testing method for both detection and localization of defective cell in an array. But since its very fast response test technique, it will be difficult to use it for online testing. Hence forth there is need for process current signal, using one of the signals processing technique. In this paper an approach of transient along with wavelet transform of the IDDT signal is proposed. By taking the wavelet transform of the transient current waveform it will be possible to cover all undetected open defect faults. The design, implementation and testing is carried using 45nm gpdk technology in cadence virtuoso EDA tool.
Authors and Affiliations
Ohileshwari . , Anandthirtha B Gudi
Keywords
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- EP ID EP394996
- DOI 10.9790/9622-0807043846.
- Views 140
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