STRUCTURE AND PHOTOVOLTAIC PROPERTIES of Zn-In-O FILMS
Journal Title: Proceedings of Electrotechnical Institute Prace Instytutu Elektrotechniki - Year 2012, Vol 59, Issue 259
Abstract
The aim of the study was to manufacture and investigation of photovoltaic properties of Zn-In-O thin films. The samples were obtained by magnetron sputtering method at the atmosphere of reactive gas (oxygen). There are many parameters, which can influence properties of manufactured films. During experiment only group frequency of the impulses was changed, in the range from 0.52 to 4.03 kHz. Other factors of magnetron sputtering process, such as power, time of deposition, temperature and vacuum level were constant (p = 1.0∙10-2 Tr, P = 200 W, t = 25 min). Photovoltaic properties of formed ZnInO films were tested by measurement of photocurrent intensity as a function of wavelength and determination of current-voltage characteristics without illumination and for selected wavelength. The results obtained indicate that photocurrent value varied with wavelength change. These changes depended on the impulses group frequency value applied during formation of layers. The thin ZnInO films manufactured at the frequency 4 kHz showed the highest photocurrent values (about hundreds of miliampers) in the whole measured spectral range. The carried out experiments demonstrate that oxide zinc with indium thin films obtained during sputtering process show photovoltaic properties. Impulses frequency group significantly affected the photovoltaic activity of the samples. In the future work influence of other technological parameters of magnetron sputtering process on the ZnInO films photocurrent value will be investigate.
Authors and Affiliations
Anna KISIEL, Jan ZIAJA, Radosław CHOWANIEC
Keywords
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