The barrier height and the series resistance of Ag/SnO2/Si/Au Schottky diode determined by Cheung and Lien methods

Journal Title: Journal of New technology and Materials - Year 2015, Vol 5, Issue 2

Abstract

Electronic parameters of Ag/SnO2 /Si/Au Schottky diode (SD) determined by Cheung and Lien methods are extracted using the current-voltage (I-V) and the capacitance-voltage (C-V) characteristics. Such SD is fabricated by the spray pyrolysis and the metallic contact is achieved by thermal evaporation process in vacuum. To determine more parameters of SD, the quantities like dV/dlnI, H(I) and Ga(V) are introduced. The non-ideal behavior of SD is confirmed, n=4.86 (n>1), the barrier height B and the series resistance Rs are found to be 0.62 V and 585 Ω (by dV/dlnI), 524.5Ω (by H(I). The use of C-V and C-²-V plots allow us to determine the density of acceptor (Na) and diffusion potential (Vd), at a kept frequency of 1MHz, of 7.8 1021 cm-3 and 0.49 V respectively. The profile of C-V, measured at various frequencies, reveals a p type of as fabricated SD where tin oxide layer is doped with 4% indium. Keywords:

Authors and Affiliations

Mostefa Benhaliliba

Keywords

Related Articles

Chemical synthesis of nanostructured silica from Algerian diatomite

In this research, we reported chemical and soft method for the purification of Algerian diatomite. We discussed the effect of different parameters such as the temperature, pH and acid leaching, on the purity of purified...

Getting ferromagnetic metallic nanofilms for information recording on the magnetic moments of the electrons

The ferromagnetic nanofilms are promising for recording information by means of electron spins. The preparation of such films is technologically very cheap. It is assumed in such matrices can be a huge recording density...

Theoretical investigation of δ-doped double barriers GaAs/AlGaAs RTDs at varying device geometry and temperature dependence

In this article, we proposed a new concept of Si-delta doping in double barrier resonant tunneling diode heterostructure. The double barrier resonant tunneling diodes (DBRTDs) are investigated through the technique of co...

Dependence of hardness to the applied load of the 42CrMo4 steel manufactured by MIM process

For the purposes of this article the hardness of material 42CrMo4 steel which is manufactured by metal injection molding (MIM) process was measured by Vickers method. When determining hardness the following loads: 196,1;...

Evolution of A Synthetic Fluid From Water Extract From Fermented Ground Maize (WEFGM) As An Alternative To Water-Based Cutting Fluids:Properties Analysis,

Relevant properties of synthetic fluid samples formulated using deionized water, Water Extract from Fermented Ground Maize (WEFGM) and deionized WEFGM as base fluids at 5 and 10%vol additives have been evaluated. The pH...

Download PDF file
  • EP ID EP268353
  • DOI -
  • Views 77
  • Downloads 0

How To Cite

Mostefa Benhaliliba (2015). The barrier height and the series resistance of Ag/SnO2/Si/Au Schottky diode determined by Cheung and Lien methods. Journal of New technology and Materials, 5(2), 24-27. https://europub.co.uk/articles/-A-268353