The charge trapping/emission processes in silicon nanocrystalline nonvolatile memory assisted by electric field and elevated temperatures
Journal Title: Semiconductor Physics, Quantum Electronics and Optoelectronics - Year 2016, Vol 19, Issue 1
Abstract
In this work, the influence of elevated temperatures on charge trapping in Si nanoclusters located in oxide layer of MOS structure has been comprehensively studied. The samples with one layer of nanocrystals in the oxide have been studied using the modular data acquisition setup for capacitance-voltage measurements. The memory window formation and memory window retention experimental methods were used with the aim to study the trapping/emission processes inside the dielectric layer of MOS capacitor memory within the defined range of elevated temperatures. The trap activation energy and charge localization were determined from measured temperature dependences of charge retention. The electric field dependence of the activation energy with subsequent charge emission law have been determined.
Authors and Affiliations
V. A. Ievtukh, V. V. Ulyanov, A. I. Nazarov
Speckle pattern formation in spatially limited optical systems
The dependences of statistical parameters inherent to speckle patterns on the object roughness and aperture size have been investigated. The experimental results that confirm theoretical dependence quality within the lim...
Quantum-size effects in semiconductor heterosystems
Created on the basis of Si, GaAs and C60 fullerenes were low-dimensional heterostructures with a surface quantum-size effect at the film-substrate interface. There have been defined technological conditions of its appear...
Variational approach to the calculation of the lowest Wannier exciton state in wide type-II single semiconductor quantum wells
The possibility to change the spatial character of the Wannier exciton ground state in a wide single type-II semiconductor quantum well has been studied variationally. A heterostructure with the central layer forming a p...
Acoustic-stimulated relaxation of GaAs1–хPх LEDs electroluminescence intensity
The effect of ultrasonic (US) treatment on electroluminescence of initial and irradiated with 2-MeV electrons (Φ = 8.24∙1014 e/cm2) GaAs-GaP LEDs grown on solid solution base was studied. It was found that luminescence i...
Nanostructuring the SiOx layers by using laser-induced self-organization
The processes of laser-induced transformation of SiOx oxide layers into the nanocomposite ones were studied. The possibility of phase separation in the form of Si nanocrystals surrounded by corresponding SiO2 oxide matri...