The Effect of Gamma Rays on the Main Static Characteristics of SiGe Transistors
Journal Title: Вісник НТУУ КПІ. Серія Радіотехніка, Радіоапаратобудування - Year 2017, Vol 0, Issue 71
Abstract
The article considers the effect of 60Co gamma rays on the characteristics (the major ones for the analog ICs) of SiGe n-p-n transistors of SGB25V technology: the voltage across the forward-biased base-emitter junction, the dependence of the static base current gain in the common-emitter (CE) configuration on emitter current, the output characteristic in the CE configuration.
Authors and Affiliations
O. Dvornikov, V. Dziatlau, N. Prokopenko
Keywords
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- EP ID EP308195
- DOI 10.20535/RADAP.2017.71.40-45
- Views 77
- Downloads 0
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