THE INTERACTION BETWEEN IMPURITIES T-ION WITH THE ASSOCIATED STATES OF OXYGEN IN SILICON
Journal Title: World Journal of Engineering Research and Technology - Year 2017, Vol 3, Issue 6
Abstract
In this paper, the interaction of impurities of transition elements with associated states of a technological impurity (oxygen) in silicon, was studied by infrared spectroscopy. It was found that the diffusion of chromium, manganese or cobalt atoms into silicon leads to a decrease in the concentration of optically active free (interstitial) oxygen by 10-30%. It is shown that high-temperature processing of silicon samples at 1100°C leads to the precipitation of oxygen atoms and the formation of particles of the SiO2 or SiO4 type, as a result of which the Nоopt decreases by 45-50%. Doping of the samples, previously subjected to heat treatment, with T-ion atoms leads to a further decrease in N оopt by 8-10%.
Authors and Affiliations
Sharifa B. Utamuradova
Keywords
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