The main characteristics of SiGe HBTs at low temperatures
Journal Title: Вісник НТУУ КПІ. Серія Радіотехніка, Радіоапаратобудування - Year 2016, Vol 0, Issue 66
Abstract
The current-voltage curves (CVC) of n-p-n SiGe heterojunction bipolar transistors (HBT) are considered within the temperature range from minus -195˚С up to 25˚С, produced on the SGB25V technology of IHP. The experimental setup, the measurement technique and the connection features of transistors for elimination of the self-excitation are described. The special attention is paid to the temperature dependences of the static base current gain βF in the common-emitter configuration (CEC) and to the output CVC characteristics of transistor in the CEC.
Authors and Affiliations
О. Dvornikov, V. Tchekhovski, N. Prokopenko
Keywords
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- EP ID EP308273
- DOI 10.20535/RADAP.2016.66.87-96
- Views 58
- Downloads 0
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