THE MONITORING OF 2D-3D TRANSITION FOR InAs/GaAs (001) SELF-ASSEMBLED QUANTUM DOTS BY ATOMIC FORCE MICROSCOPY
Journal Title: Journal of Science And Arts - Year 2008, Vol 9, Issue 2
Abstract
We present a detailed Atomic Force Microscopy study of InAs/GaAs (001) selfassembled quantum dots grown by Molecular Beam Epitaxy during its complete evolution cycle (transition from 2D islands to 3D islands). We have performed a statistical analysis regarding quantum dot number density identifying the existence of two separated distributions (for quasi-3D dots and 3D dots). We have observed that the density number value of quasi-3D QDs decreases from 1.1 x 10 cm to 4.3 x 10 cm for a coverage between 1.57 ML and 1.61 ML, while for 3D QDs it increases by a factor of 10 (from 2.1 x 1010 cm-2 to 2.3 x 1010 cm-2) so as the 3D QDs become the prevailed structures. We can assume as critical coverage, 1.59 ML.
Authors and Affiliations
Oana Bute, Valerica Gheoghe Cimpoca, Ernesto Placidi, Fabrizio Arciprete
Keywords
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