Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures
Journal Title: Semiconductor Physics, Quantum Electronics and Optoelectronics - Year 2016, Vol 19, Issue 1
Abstract
Thermally stimulated conductivity of the InGaAs-GaAs heterostructures with quantum wires was studied using different quantum energies of exciting illumination. The structures reveal long-term photoconductivity decay within the temperature range 100 to 200 K, and effect of residual conductivity after turning-off the illumination. Analyzing the data of thermally stimulated conductivity, the following energies of electron traps were found: 90, 140, and 317 meV. The role of deep traps in recombi-nation process as well as the photoconductivity mechanism was discussed.
Authors and Affiliations
S. A. Iliash, S. V. Kondratenko, A. S. Yakovliev, V. P. Kunets, Yu. I. Mazur, G. J. Salamo
Keywords
Related Articles
- EP ID EP177844
- DOI 10.15407/spqeo19.01.075
- Views 116
- Downloads 0
The phenomenon of magnetic exchange bias in ferromagnetic nanocomposites grown by electron beam evaporation
For the first time, in ferromagnetic nanocomposites Co/СoO/Al2O3 formed by two-crucible electron beam evaporation with deposition on a policor substrate, the magnetic exchange bias was observed. It is associated with the...
Comparison of properties inherent to thin titanium oxide films formed by rapid thermal annealing on SiC and porous SiC substrates
The comparative analysis of optical characteristics inherent to TiO2/SiC and TiO2/por-SiC/SiC structures has been performed. It has been shown that, in these structures regardless of the substrate structure, formation of...
Electronic structure of 2H-SnSe2: ab initio modeling and comparison with experiment
Energy band structure, total and local partial densities of states, spatial distribution of electronic density of 2H-SnSe2 have been calculated using the density functional theory method in LDA and LDA+U approximations b...
Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review)
In this paper, different methods for lowering the dislocation density such as incorporation of the buffer layers, substrate patterning and nitridation, silan-ammonia treatment are reviewed and compared. Advantages and li...
The influence of ethylene glycol on the chemical interaction of PbTe and Pb1–xSnxTe crystals with H2O2–HBr–ethylene glycol etching compositions
The process of cutting, mechanical and chemical treatment of the PbTe and Pb1–xSnxTe crystal surface has been studied. The dependences of the chemical-mechanical polishing rate versus dilution of the base polishing etcha...