THERMOELECTRIC GENERATOR WITH POLYCRYSTALLINE SILICON MATERIAL
Journal Title: Journal of Science And Arts - Year 2008, Vol 9, Issue 2
Abstract
Compared to bulk technology, the key advantages of integrated micro devices designed with thousands of thermocouples are their ability to handle much higher heat fluxes, their much faster response time as well as the possibility of generating high voltages under small temperature differentials. We develop novel micro devices with a conventional vertically integrated configuration combining high thermal conductivity substrates such as diamond or silicon integrated circuit technology, and low-pressure chemical vapor deposition (LPCVD) of thick thermoelectric films. A thermoelectric in-plane micro-generator with nanometric films has been fabricated using compatible standard semiconductor technologies (MEMS). The active material is a nanolayer polycrystalline silicon material laid on a dielectric membrane sustained by a silicon frame. Thermal properties of semiconductor nanostructures have recently attracted a lot of attention. This is primarily due to two major factors. The first one is a continuous scaling down of the feature sizes in microelectronic devices and circuits, which leads to an increase in power dissipation per unit area of semiconductor chip. Under such conditions, the influence of size effects on thermal conductivity becomes extremely important for device design and reability.
Authors and Affiliations
Iulian Bancuta, Valerica Gheorghe Cimpoca, Ion V. Popescu, Anca Gheboianu, Maria Cimpoca, Claudia Stihi, Gheorghe Brezeanu
Keywords
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