To Study and Explain the Synthesis of II-VI Group Semiconducting Nano-Materials
Journal Title: International Journal of Physics, Chemistry and Mathematical Fundamentals (www.ijpcmf.com) - Year 2012, Vol 1, Issue 1
Abstract
It is well-known that II-VI materials are important optoelectronic, luminescent, and lasing materials because of the large range of electronic energy band gaps which they exhibit. In the past few years, it was discovered that one-dimensional (1D) nanostructures, such as nanorod, nanowire and nanoribbon, have attracted extensive attention because of their unusual quantum properties and potential applications. They are expected to be both the connecters and functional components applied in the future microscopic electronic and optical devices. While structures, morphologies and sizes of nanostructures plays an important role on these applications, development of the controlled growth and understanding of the mechanism of various one-dimensional semiconductor nanostructures with homogeneous structures and compositions should then be given more effort. This paper presents a review on synthesis, structure and growth mechanisms of II-VI nanomaterials and the main focus is devoted to ZnO and ZnS. Zinc oxide (ZnO) is believed to have the largest amount of different morphologies apart from carbon nanotube (CNT) and zinc sulfide (ZnS) consists of the largest band gap among II-VI materials.
Authors and Affiliations
Chabbila , Dr. S. B. L. Tripathi , Rajesh Sharma , Dr. Ashwani Sharma
Keywords
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