Variable Threshold MOS Circuits
Journal Title: International Journal of Modern Engineering Research (IJMER) - Year 2013, Vol 3, Issue 6
Abstract
Dynamic threshold MOS (DTMOS) circuits provide low leakage and high current drive , compared to CMOS circuits, operated at low voltages. This paper proposes a modified DTMOS approach, called Variable threshold MOS (VTMOS) approach. The VTMOS is based on operating the MOS devices with an appropriate substrate bias which varies with gate voltage, by connecting a positive bias voltage between gate and substrate for NMOS and negative bias voltage between gate and substrate for PMOS. With VTMOS, there is a considerable reduction in operating current and power dissipation, while the remaining characteristics are almost the same as those of DTMOS. Results of our investigations show that VTMOS circuits improves the power up to 50% when compared to CMOS and DTMOS circuits, in sub threshold-region.The performance characteristics of VTMOS circuits - The Power dissipation, Propagation delay and Power delay product with the substrate bias have been evaluated through simulation using H spice. The dependency of these parameters on frequency of operation has also been investigated.
Authors and Affiliations
Dr. Ragini K
Keywords
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