Zn2SiO4 and SnO2 nanowires synthesized by thermal ramping technique
Journal Title: International Journal of Fundamental Physical Sciences - Year 2011, Vol 1, Issue 3
Abstract
In this report, nanowires of Zn2SiO4 and SnO2 have been successfully synthesized using a simple novel method namely thermal ramping technique. The technique applies thermal ramping of the sample to a temperature of 900 o C using carbothermal reduction method. This technique requires no carrier gas. Elemental analysis and crystal structure were evaluated using Field Emission Scanning Electron Microscopy (FESEM), Energy Dispersive X-ray (EDX) and X-ray Diffraction(XRD) analysis. Nanowires of SnO2 and Zn2SiO4 with a diameter ranging from 15-25 nm were observed. The effect of Au thickness in synthesizing Zn2SiO4 is also discussed.
Authors and Affiliations
Zainal Abidin Ali *, R. Puteh
Keywords
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- EP ID EP599308
- DOI 10.14331/ijfps.2011.330016
- Views 78
- Downloads 0
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