F4-TCNQ Concentration Dependent Capacitance-Voltage (C-V) and Conductivity-Voltage (G/w-V) Characteristics of the Au/P3HT:F4-TCNQ/N-Si (MPS) Schottky Barrier Diodes Journal title: International Journal of Engineering and Science Invention Authors: Aslıhan Çimen, Hüseyin Muzaffer Şağban, Tuğba Özdemir, Özge Tüzün Özmen Subject(s):
