TRANSPORT PHENOMENA IN GRAPHENE IN GENERALIZED LANDAUER – DATTA – LUNDSTROM MODEL Journal title: Сенсорна електроніка і мікросистемні технології Authors: Yu. A. Kruglyak, M. V. Strikha Subject(s):
Electron and hole effective masses in heavily boron doped silicon nanostructures determined using cyclotron resonance experiments Journal title: Semiconductor Physics, Quantum Electronics and Optoelectronics Authors: D.V. Savchenko Subject(s):
Polysilicon and Metal-Gated N-Channel Grounded Si Mosfets As Devices To Characterise MIS Structures By The BOEMDET Technique Journal title: IOSR Journal of Applied Physics (IOSR-JAP) Authors: Dr. R. K. Chanana Subject(s):
Optical properties of the massive Vanadium dioxide Journal title: JOURNAL OF ADVANCES IN PHYSICS Authors: Abderrahim Benchaib, Abdesselam Mdaa, Izeddine Zorkani, Anouar Jorio Subject(s):
