Electron and hole effective masses in heavily boron doped silicon nanostructures determined using cyclotron resonance experiments
Journal Title: Semiconductor Physics, Quantum Electronics and Optoelectronics - Year 2018, Vol 21, Issue 3
Abstract
We present the experimental and theoretical results of analysis of the optically- induced cyclotron resonance measurements carried out using the charge carriers in silicon (Si) nanostructures at 9 GHz and 4 K. Effective mass values for electrons were determined as m el ∗ = 0 . 93 m 0 and m el ∗ = 0 . 214 m 0 . The obtained value of the transversal mass is higher than that reported for bulk Si. Parameters defining the energy surfaces near the valence band edge for heavy and light holes were found to be equal: A = –4.002, B = 1.0, C = 4.025, and corresponding to the experimental effective masses obtained in three orientations of the magnetic field: m lh= 0 . 172 , m lh= 0 . 157 , m lh = 0 . 163 , and m hh= 0 . 46 , m ∗ [ 111 ] = 0 . 56 , m ∗ [ 110 ] = 0 . 53 . The obtained energy band parameters and effective masses for holes have coincided with those found in bulk Si. The average values of the relaxation time of the charge carriers are found to be: τ e,1 = 2.28⋅10 –10 s; τ e,2 = 3.57⋅10 –10 s; τ lh = 6.9⋅10 –10 s; τ hh = 7.2⋅10 –10 s, which are by one order of value larger than those obtained in bulk Si. The prolongation of the transport time for photo-excited electrons and holes can be explained by the spatial separation of electrons and holes in the field of the p + -n junction as well as by reduction of the scattering process due to the presence of boron dipole centers. Keywords: cyclotron resonance, effective mass, relaxation time, silicon nanostructure.
Authors and Affiliations
D. V. Savchenko
Keywords
Related Articles
- EP ID EP416033
- DOI 10.15407/spqeo21.03.249
- Views 63
- Downloads 0
Designing and manufacturing aspherical polystyrene lenses for the terahertz region
We report on the development of lenses for terahertz vision systems from their design up to manufacturing. Fused deposition modeling was used for assisting the 3D printing manufacturing process. HIP (High Impact Polystyr...
Electronic structure of Ag8GeS6
For the first time, the energy band structure, total and partial densities of states of Ag8GeS6 crystal were calculated using the ab initio density functional method in LDA and LDA+U approximations. Argyrodite is direct-...
Nanostructuring the SiOx layers by using laser-induced self-organization
The processes of laser-induced transformation of SiOx oxide layers into the nanocomposite ones were studied. The possibility of phase separation in the form of Si nanocrystals surrounded by corresponding SiO2 oxide matri...
Saturation effect for dependence of the electrical conductivity of planar oriented nematic liquid crystal 6CB on the concentration of Cu7PS6 nanoparticles
The influence of Cu7PS6 nanoparticles with the average size 117 nm on the dielectric properties of planar oriented nematic liquid crystal 6CB has been investigated within the frequency range 101…106 Hz and at the tempera...
The non-linear dependence of 6СНВТ liquid crystal conductivity on the concentration of gold nanoparticles
Within the frequency range 10–1…106 Hz at the temperature 293 K, the effect of gold nanoparticles on the dielectric properties of the planar-oriented nematic liquid crystal 6СНВТ has been studied. The concentration of na...