New evidence of the hopping nature of the excess tunnel current in heavily doped silicon p-n diodes at cryogenic temperatures Journal title: Semiconductor Physics, Quantum Electronics and Optoelectronics Authors: V. L. Borblik, Yu. M. Shwarts, M. M. Shwarts, A. B. Aleinikov Subject(s):
Low-Impedance Investigations of Hydrogenated GaSe Layered Crystals Journal title: Фізика і хімія твердого тіла Authors: V.M. Kaminskii, T.I. Bratanich, Z.D. Kovalyuk, V.B. Boledzyuk, V.I. Ivanov, V.V. Netyaga Subject(s):
