New evidence of the hopping nature of the excess tunnel current in heavily doped silicon p-n diodes at cryogenic temperatures
Journal Title: Semiconductor Physics, Quantum Electronics and Optoelectronics - Year 2017, Vol 20, Issue 2
Abstract
The new experimental data concerning the effect of magnetic field on electric properties of silicon diodes with high doping levels both in the emitter and base (conduction of which at low temperatures is determined by the excess tunnel current) has been analyzed. In addition to previous investigations of the influence of magnetic fields up to 9.4 T on this tunnel current at 4.2 K, now the measurements have been carried out up to 14 T at temperatures lower than the liquid helium temperature. Under these conditions, the transfer to saturation of the diode magnetoresistance was observed, which agrees with the results predicted theoretically for the hopping conduction via impurity centers in high magnetic fields.
Authors and Affiliations
V. L. Borblik, Yu. M. Shwarts, M. M. Shwarts, A. B. Aleinikov
Keywords
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- EP ID EP216940
- DOI 10.15407/spqeo20.02.195
- Views 82
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