Electron transport through nanocomposite SiO2(Si) films containing Si nanocrystals
Journal Title: Semiconductor Physics, Quantum Electronics and Optoelectronics - Year 2016, Vol 19, Issue 1
Abstract
The current transport through insulating SiO2 films with silicon nanocrystals in Si/SiO2(Si)/Al structures has been investigated in the wide range of temperatures (82…350 K). The nanocomposite SiO2(Si) films containing the silicon nanoclusters embedded into insulating SiO2 matrix have been obtained by ion-plasma sputtering of silicon target and subsequent high-temperature annealing. Based on the detailed analysis of current-voltage characteristics, calculation of some electrical parameters has been performed and the mechanism of electron conductivity of nanocomposite SiO2(Si) films has been ascertained. The electrical conductivity of the films is based on the mechanism of hopping conductivity with variable-range hopping through the traps near the Fermi level.
Authors and Affiliations
O. L. Bratus, A. A. Evtukh, O. V. Steblova, V. M. Prokopchuk
Keywords
Related Articles
- EP ID EP177811
- DOI 10.15407/spqeo19.01.009
- Views 79
- Downloads 0
Carbon ceramics from plants: Graphitization of biomorphic matrixes
Properties of matrixes obtained from plants at various pyrolysis temperatures have been discussed. The article is devoted to graphitization of carbon matrixes obtained from plants. All stages of production, starting from...
Designing and manufacturing aspherical polystyrene lenses for the terahertz region
We report on the development of lenses for terahertz vision systems from their design up to manufacturing. Fused deposition modeling was used for assisting the 3D printing manufacturing process. HIP (High Impact Polystyr...
Nanoferroics: State-of-art, gradient-driven couplings and advanced applications (Author’s review)
Ferroics and multiferroics are unique objects for fundamental physical research of complex nonlinear processes and phenomena that occur in them within micro- or nanoscale. Due to the possibility of their physical propert...
Thin dysprosium oxide films formed by rapid thermal annealing on porous SiC substrate
In this paper, we consider the effect of rapid thermal annealing (RTA) on the properties of Dy 2 O 3 film formed on the surface of a substrate with a por-SiC/SiC structure. The atomic composition of the films under study...
Direct synthesized graphene-like film on SiO2: Mechanical and optical properties
Exploiting CVD technique for carbon deposition from C2H2+H2+N2 mixture, a graphene-like film synthesized directly on SiO2 surface of SiO2-Si structure was obtained. The graphene-like film was grown under thin Ni layer th...