Optical properties of thin erbium oxide films formed by rapid thermal annealing on SiC substrates with different structures
Journal Title: Semiconductor Physics, Quantum Electronics and Optoelectronics - Year 2017, Vol 20, Issue 4
Abstract
The comparative analysis of optical characteristics inherent to Er2O3/SiC and Er2O3/por-SiC/SiC structures has been performed. It has been shown that, regardless the substrate on which the Er2O3 film is formed, an increase in the rapid thermal annealing time leads to an improvement in the oxide film composition, with the composition of the Er2O3 film approaching to the stoichiometric one. At the same time, introduction of an additional porous SiC layer leads to a blurring of the oxide film/substrate interface and broadening the photoluminescence band measured in this structure.
Authors and Affiliations
Yu. Yu. Bacherikov, R. V. Konakova, O. B. Okhrimenko, N. I. Berezovska, L. M. Kapitanchuk, A. M. Svetlichnyi
Keywords
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- EP ID EP265333
- DOI 10.15407/spqeo20.04.465
- Views 66
- Downloads 0
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