The influence of substrate temperature on properties of Cu-Al-O films deposited using the reactive ion beam sputtering method
Journal Title: Semiconductor Physics, Quantum Electronics and Optoelectronics - Year 2017, Vol 20, Issue 3
Abstract
For the first time, Cu-Al-O films were grown using the reactive ion beam sputtering at temperatures ranging from 80 to 380 °C in 50 °C increments. Correlations between the properties of as-grown films measured by X-ray diffraction, energy dispersive X-ray spectroscopy, atomic force microscopy, Fourier transform infrared spectrometry and optical transmission measurements have been discussed. It was shown that the increase of substrate temperature caused formation of the CuAlO2 phase. Additional optimization of technological parameters of growth and post-growth temperature annealing are necessary to obtain single-phase CuAlO2 films.
Authors and Affiliations
A. I. Ievtushenko, M. G. Dusheyko, V. A. Karpyna, O. I. Bykov, P. M. Lytvyn, A. A. Korchovyi, S. P. Starik, S. V. Tkach, E. F. Kuzmenko, G. V. Lashkarev
Keywords
Related Articles
- EP ID EP232785
- DOI 10.15407/spqeo20.03.314
- Views 64
- Downloads 0
Analysis of a quantum well structure optical integrated device
This paper demonstrates theoretical modeling of a quantum well structure optical integrated device. The constituent devices of the developed structure are a Quantum Well Infrared Photodetector (QWIP) to detect the optica...
Influence of experimental parameters inherent to optical fibers on Quantum Key Distribution, the protocol BB84
In this work, we represent the principle of quantum cryptography (QC) that is based on fundamental laws of quantum physics. QC or Quantum Key Distribution (QKD) uses various protocols to exchange a secret key between two...
Peculiarities of photoluminescence spectra behavior in SiC crystals and films during phase transformations
Peculiarities of photoluminescence spectra behavior in SiC crystals and thin films with in-grown defects during phase transformations have been studied. On the deep-level(DL)-spectra, as an example, their characteristics...
Long-term radiation-induced optical darkening effects in chalcogenide glasses
In this work, it is reported that the -irradiated (2.41 MGy accumulated dose) glasses As2S3 (2 mm thick) and Ge15.8As21S63.2 (1 mm thick), both measured 10 years after -irradiation, exhibit radiation-induced optical...
Studying the mechanical properties of (Cu1–xAgx)7GeS5I mixed crystals by using the micro-indentation method
(Cu1–xAgx)7GeS5I mixed crystals were grown using the Bridgman–Stockbarger method. The hardness dependences on the indentation depth profiles in (Cu 1–x Ag x ) 7 GeS 5 I mixed crystals were investigated. The measurements...