The influence of substrate temperature on properties of Cu-Al-O films deposited using the reactive ion beam sputtering method
Journal Title: Semiconductor Physics, Quantum Electronics and Optoelectronics - Year 2017, Vol 20, Issue 3
Abstract
For the first time, Cu-Al-O films were grown using the reactive ion beam sputtering at temperatures ranging from 80 to 380 °C in 50 °C increments. Correlations between the properties of as-grown films measured by X-ray diffraction, energy dispersive X-ray spectroscopy, atomic force microscopy, Fourier transform infrared spectrometry and optical transmission measurements have been discussed. It was shown that the increase of substrate temperature caused formation of the CuAlO2 phase. Additional optimization of technological parameters of growth and post-growth temperature annealing are necessary to obtain single-phase CuAlO2 films.
Authors and Affiliations
A. I. Ievtushenko, M. G. Dusheyko, V. A. Karpyna, O. I. Bykov, P. M. Lytvyn, A. A. Korchovyi, S. P. Starik, S. V. Tkach, E. F. Kuzmenko, G. V. Lashkarev
Keywords
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- EP ID EP232785
- DOI 10.15407/spqeo20.03.314
- Views 58
- Downloads 0
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