Dependence of the anisotropy parameter of drag thermo-emf on the impurity concentration in the n-type germanium and silicon crystals
Journal Title: Semiconductor Physics, Quantum Electronics and Optoelectronics - Year 2017, Vol 20, Issue 1
Abstract
Features of the concentration dependences of the anisotropy parameter of thermo-emf of electron-phonon drag M in germanium and silicon crystals of n-type conductivity were found in a wide range of charge carrier concentrations. Insensitivity of the anisotropy parameter M to the presence of impurities in the germanium crystals up to the concentrations of 1015 cm 3 was found, whereas in silicon with increasing the doping level the monotonic decrease in this parameter was observed. The significantly lower absolute values of the parameter M were obtained for the silicon crystals as compared with the corresponding values of this parameter for the germanium ones. The physical nature of the identified effects was explained.
Authors and Affiliations
G. P. Gaidar, P. I. Baranskii
Keywords
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- EP ID EP179328
- DOI 10.15407/spqeo20.01.123
- Views 73
- Downloads 0
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