Quantum-size effects in semiconductor heterosystems
Journal Title: Semiconductor Physics, Quantum Electronics and Optoelectronics - Year 2017, Vol 20, Issue 2
Abstract
Created on the basis of Si, GaAs and C60 fullerenes were low-dimensional heterostructures with a surface quantum-size effect at the film-substrate interface. There have been defined technological conditions of its appearance. Using modulation electroreflectance spectroscopy, calculated were spectral broadening parameters, the energy relaxation time of excited light charge carriers, the energy of quantized levels and the width of the quantum wells.
Authors and Affiliations
L. A. Matveeva, E. F. Venger, E. Yu. Kolyadina, P. L. Neluba
Keywords
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- EP ID EP216945
- DOI 10.15407/spqeo20.02.224
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