Low doses effect in GaP light-emitting diodes
Journal Title: Semiconductor Physics, Quantum Electronics and Optoelectronics - Year 2016, Vol 19, Issue 2
Abstract
The paper is devoted to the electrophysical characteristics study of serial red and green GaP light-emitting diodes (LEDs) irradiated with low α-particles doses (Φ ≤ 1012 cm–2). It was stated that radiation features of p-n-junction and its capacitance change in dependence on temperature. The capacitance grows at 300 K, and drops at 77 K. At the same time, a direct branch of current-voltage characteristics shifts into the lower voltage direction, and appropriative barrier potential reduction value from 6.5 down to 3.5 eV is observed. The effects are caused by radiation defects, charge state of which depends on the Fermi level in GaP. The assumption has been made about high ionization level role in the sulfur impurity transition process into electrically active donor position.
Authors and Affiliations
O. M. Hontaruk, O. V. Konoreva, Ye. V. Malyi, I. V. Petrenko, M. B. Pinkovska, O. I. Radkevych, V. P. Tartachnyk
Keywords
Related Articles
- EP ID EP178125
- DOI 10.15407/spqeo19.02.183
- Views 72
- Downloads 0
Impact of semiconductor quantum dots bandgap on reabsorption in luminescent concentrator
We have investigated the influence of the average radius and its dispersion of the semiconductor quantum dots (QDs) used in luminescent solar concentrators (LSCs) on reabsorption. To minimize the detrimental reabsorption...
Nonmonotonic (in concentration) conductivity of aqueous solutions of fungal melanin
The conductivity of aqueous (distilled and natural water) solutions of fungal melanin (purified and non-purified) has been studied. It has been shown that, in the presence of impurities, the conductivity of solution incr...
Optical properties of graphene film growing on a thin copper layer
Optical properties and surface structure of graphene films grown on thin 1-μm copper layer using the chemical vapor deposition method were investigated applying spectroscopic ellipsometry and nanoscopic measurements. Ang...
Temperature studies of optical absorption in the sandwich structure based on (Ag3AsS3)0.6(As2S3)0.4 thin film and gold nanoparticles
(Ag3AsS3)0.6(As2S3)0.4 thin films deposited using the thermal evaporation technique onto glass substrates previously covered with layers of gold nanoparticles were studied. Optical transmission spectra of the sandwich st...
New evidence of the hopping nature of the excess tunnel current in heavily doped silicon p-n diodes at cryogenic temperatures
The new experimental data concerning the effect of magnetic field on electric properties of silicon diodes with high doping levels both in the emitter and base (conduction of which at low temperatures is determined by th...