Increasing the specularity of surface scattering of conduction electrons caused by adsorption of a hydrogen monolayer on the W(110) surface Journal title: Semiconductor Physics, Quantum Electronics and Optoelectronics Authors: S. V. Sologub, I. V. Bordenyuk, O. V. Kanash, R. H. Amirov Subject(s):
New evidence of the hopping nature of the excess tunnel current in heavily doped silicon p-n diodes at cryogenic temperatures Journal title: Semiconductor Physics, Quantum Electronics and Optoelectronics Authors: V. L. Borblik, Yu. M. Shwarts, M. M. Shwarts, A. B. Aleinikov Subject(s):
AN ANTHOLOGY OF THE DISTINGUISHED ACHIEVEMENTS IN SCIENCE AND TECHNIQUE. PART 38: NOBEL PRIZE LAUREATES IN PHYSICS FOR 2005-2010 Journal title: Електротехніка і Електромеханіка Authors: M.I. Baranov Subject(s):
Magnetoresistance of Ge-Si Whiskers in the Vicinity to Metal– Insulator Transition Journal title: Фізика і хімія твердого тіла Authors: A. O. Druzhynin, I.P. Ostrovskyy, Yu. N. Khoverko, N. S. Liakh-Kaguy Subject(s):
