850/940-nm VCSEL for optical communication and 3D sensing
Journal Title: Opto-Electronic Advances - Year 2018, Vol 1, Issue 3
Abstract
This paper is going to review the state-of-the-art of the high-speed 850/940-nm vertical cavity surface emitting laser (VCSEL), discussing the structural design, mode control and the related data transmission performance. InGaAs/AlGaAs multiple quantum well (MQW) was used to increase the differential gain and photon density in VCSEL. The multiple oxide layers and oxide-confined aperture were well designed in VCSEL to decrease the parasitic capacitance and generate single mode (SM) VCSEL. The maximal modulation bandwidth of 30 GHz was achieved with well-designed VCSEL structure. At the end of the paper, other applications of the near-infrared VCSELs are discussed.
Authors and Affiliations
Chih-Hsien Cheng, Chih-Chiang Shen, Hsuan-Yun Kao, Dan-Hua Hsieh, Huai-Yung Wang, Yen-Wei Yeh, Yun-Ting Lu, Sung-Wen Huang Chen, Cheng-Ting Tsai, Yu-Chieh Chi, Tsung Sheng Kao, Chao-Hsin Wu*, Hao-Chung Kuo*, Po-Tsung Lee, Gong-Ru Lin*
Keywords
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- EP ID EP683083
- DOI 10.29026/oea.2018.180005
- Views 181
- Downloads 0
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