Progress of optically pumped GaSb based semiconductor disk laser
Journal Title: Opto-Electronic Advances - Year 2018, Vol 1, Issue 2
Abstract
This paper reviewed the development of optically pumped GaSb based semiconductor disk lasers (SDLs) emission at 2 μm wavelength region from the aspects of wavelength extending, power scaling, line-width narrowing and short-pulse generation. Most recently, the wavelength of GaSb based SDLs has been extended to 2.8 μm. The highest output power of the GaSb based SDLs has been reached to 17 W at the temperature of 20 ℃. By using active stabilization, the GaSb based SDL with line-width of 20 kHz and output power of 1 W was realized. Moreover, the shortest pulse obtained from the GaSb based SDLs was generated as short as 384 fs by incorporating semiconductor saturable absorber mirrors (SESAM) in the cavity.
Authors and Affiliations
Shili Shu, Guanyu Hou, Jian Feng, Lijie Wang, Sicong Tian, Cunzhu Tong*, Lijun Wang
Recent advances in nonlinear optics for bio-imaging applications
Nonlinear optics, which is a subject for studying the interaction between intense light and materials, has great impact on various research fields. Since many structures in biological tissues exhibit strong nonlinear opt...
Distributed multicore fiber sensors
Multicore fiber (MCF) which contains more than one core in a single fiber cladding has attracted ever increasing attention for application in optical sensing systems owing to its unique capability of independent light tr...
Optically pumped room temperature low threshold deep UV lasers grown on native AlN substrates
We report here an optically pumped deep UV edge emitting laser with AlGaN multiple quantum wells (MQWs) active region grown on AlN substrate by low pressure organometallic vapor phase epitaxy (LP-OMVPE) in a high-tempera...
Enhancement of laser ablation via interacting spatial double-pulse effect
A novel spatial double-pulse laser ablation scheme is investigated to enhance the processing quality and efficiency for nanosecond laser ablation of silicon substrate. During the double-pulse laser ablation, two splitted...
Helicity-dependent THz emission induced by ultrafast spin photocurrent in nodal-line semimetal candidate Mg3Bi2
Helicity-dependent ultrafast spin current generated by circularly polarized photons in topological materials holds the crux to many technological improvements, such as quantum communications, on-chip communication proces...