Progress of optically pumped GaSb based semiconductor disk laser
Journal Title: Opto-Electronic Advances - Year 2018, Vol 1, Issue 2
Abstract
This paper reviewed the development of optically pumped GaSb based semiconductor disk lasers (SDLs) emission at 2 μm wavelength region from the aspects of wavelength extending, power scaling, line-width narrowing and short-pulse generation. Most recently, the wavelength of GaSb based SDLs has been extended to 2.8 μm. The highest output power of the GaSb based SDLs has been reached to 17 W at the temperature of 20 ℃. By using active stabilization, the GaSb based SDL with line-width of 20 kHz and output power of 1 W was realized. Moreover, the shortest pulse obtained from the GaSb based SDLs was generated as short as 384 fs by incorporating semiconductor saturable absorber mirrors (SESAM) in the cavity.
Authors and Affiliations
Shili Shu, Guanyu Hou, Jian Feng, Lijie Wang, Sicong Tian, Cunzhu Tong*, Lijun Wang
Keywords
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- EP ID EP683080
- DOI 10.29026/oea.2018.170003
- Views 209
- Downloads 0
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